all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! data sheet 1 of 9 rev. 03, 2017-08-30 PTVA084007NF PTVA084007NF package pg-hbsof-4-2 thermally-enhanced high power rf ldmos fet 370 w, 48 v, 755 C 805 mhz features ? broadband internal input and output matching ? target cw performance, 805 mhz, 48 v, single side - output power at p 3db = 370 w - effciency = 64% - gain = 20.8 db ? capable of handling 10:1 vswr @ 48 v, 100 w (cw) output power ? integrated esd protection ? human body model class 2 (per ansi/esda/ jedec js-001) ? low thermal resistance ? pb-free and rohs compliant description the PTVA084007NF is a 370-watt (p 3db ) ldmos fet manufactured with infineon's 48-v ldmos process. it is designed for use in multi-standard cellular power amplifer applications. it features a single-ended design and input and output matching that allow for use from 755 mhz to 805 mhz. rf characteristics single-carrier wcdma specifications ( tested in infineon production test fixture) v dd = 48 v, i dq = 800 ma, p out = 80 w avg, ? 1 = 805 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 10 db @ 0.01% ccdf. characteristic symbol min typ max unit gain g ps 22 23.6 db drain effciency h d 37 39 % adjacent channel power ratio acpr C31.6 C28.5 dbc output par @ 0.01% ccdf, 20 mhz opar 6.4 7 db -60 -40 -20 0 20 40 60 4 8 12 16 20 24 28 25 30 35 40 45 50 55 efficiency (%) peak/average ratio, gain (db) average output power (dbm) single - carrier wcdma drive - up v dd = 48 v, i dq(main) = 800 ma, ? = 805 mhz, 3gpp wcdma signal, par = 10 db, 3.84 mhz bw gain efficiency par @ 0.01% ccdf PTVA084007NF_g1
PTVA084007NF data sheet 2 of 9 rev. 03, 2017-08-30 dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 105 v drain leakage current v ds = 48 v, v gs = 0 v i dss 1 a v ds = 105 v, v gs = 0 v i dss 10 a gate leakage current v gs = 10 v, v ds = 0 v i gss 1 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) 0.12 w operating gate voltage v ds = 48 v, i dq = 0.7 a v gs 3.07 3.67 4.27 v maximum ratings parameter symbol value unit drain-source voltage v dss 105 v gate-source voltage v gs C6 to +12 v operating voltage v dd 0 to +55 v junction temperature t j 225 c storage temperature range t stg C65 to +150 c thermal characteristics parameter symbol value unit thermal resistance (t case = 70 c, 370 w cw) r qjc 0.21 c/w ordering information type and version order code package description shipping PTVA084007NF v1 r5 PTVA084007NFv1r5xuma1 pg-hbsof-4-2, plastic package tape & reel, 500 pcs
data sheet 3 of 9 rev. 03, 2017-08-30 PTVA084007NF typical rf performance (data taken in production test fixture) 0 10 20 30 40 50 60 -70 -60 -50 -40 -30 -20 -10 27 32 37 42 47 52 57 efficiency (%) acp up & low (dbc) average output power (dbm) single - carrier wcdma drive - up v dd = 48 v, i dq(main) = 800 ma, ? = 805 mhz, 3gpp wcdma signal, par = 10 db, bw = 3.84 mhz acpu acpl efficiency PTVA084007NF_g2 -18 -14 -10 -6 -2 -45 -40 -35 -30 -25 675 725 775 825 875 return loss (db) acpl & acp up (dbc) frequency (mhz) single - carrier wcdma broadband performance v dd = 48 v, i dq(main) = 800 ma, p out = 49.03 dbm, 3gpp wcdma signal, par = 10 db acpu acpl irl PTVA084007NF_g4 20 30 40 50 60 16 18 20 22 24 26 675 725 775 825 875 efficiency (%) gain (db) frequency (mhz) single - carrier wcdma broadband performance v dd = 48 v, i dq(main) = 800 ma, p out = 49.03 dbm, 3gpp wcdma signal, par = 10 db efficiency gain PTVA084007NF_g3 0 10 20 30 40 50 60 70 18 19 20 21 22 23 24 25 29 33 37 41 45 49 53 57 efficiency (%) gain (db) output power (dbm) cw performance v dd = 48 v, i dq(main) = 800 ma 805mhz gain 755mhz gain 780mhz gain 755mhz eff 780mhz eff 805mhz eff PTVA084007NF_g5
PTVA084007NF data sheet 4 of 9 rev. 03, 2017-08-30 typical rf performance (cont.) load pull performance load pull performance C pulsed cw signal: 160 s, 10% duty cycle, 48 v, i dq = 700 ma p 1db max output power max drain efficiency freq [mhz] zs [ w] zl [ w ] gain [db] p 1db [dbm] p 1db [w] hd [%] zl [ w ] gain [db] p 1db [dbm] p 1db [w] hd [%] 758 1.97-j3.32 1.12-j0.53 21.7 57.00 501.2 58.6 2.02+j0.87 23.4 54.6 287.7 73.2 780 2.23-j3.76 1.09-j0.43 22.0 56.80 478.6 58.3 1.87+j0.89 23.8 54.5 281.2 72.0 803 3.01-j3.64 1.00-j0.42 22.0 56.78 476.4 57.6 1.83+j0.70 23.8 54.6 286.4 71.7 p 3db max output power max drain efficiency freq [mhz] zs [ w] zl [ w ] gain [db] p 3db [dbm] p 3db [w] hd [%] zl [ w ] gain [db] p 3db [dbm] p 3db [w] hd [%] 758 1.97-j3.32 1.14-j0.59 19.8 57.75 595.7 61.9 2.00+j0.40 21.3 55.9 388.2 73.8 780 2.23-j3.76 1.09-j0.46 20.0 57.56 570.2 60.9 1.96+j0.43 21.7 55.8 377.6 72.5 803 3.01-j3.64 1.03-j0.49 20.0 57.52 564.9 60.2 1.73+j0.62 21.7 55.3 338.1 72.0 0 10 20 30 40 50 60 70 18 19 20 21 22 23 24 25 29 33 37 41 45 49 53 57 efficiency (%) gain (db) output power (dbm) cw performance at various v dd i dq(main) = 800 ma, ? = 805 mhz 44v 48v 52v PTVA084007NF_g6 gain efficiency -16 -14 -12 -10 -8 -6 -4 14 16 18 20 22 24 26 700 750 800 850 input return loss (db) gain (db) frequency (mhz) cw performance small signal gain & input return loss v dd = 48 v, i dq(main) = 800 ma irl gain PTVA084007NF_g7
data sheet 5 of 9 rev. 03, 2017-08-30 PTVA084007NF reference circuit, 758 C 803 mhz reference circuit assembly diagram (not to scale) r 101 c107 c105 c101 c104 c103 c102 c108 c106 r 102 r 103 r 104 c 210 c 201 c 203 c204 c 212 c213 c 207 c209 c208 c 202 c211 c205 c 206 c214 c215 ptva 084007nf_in_01 ro4350 , 20 mil ro 4350 , 20 mil PTVA084007NF_out _01 rf_out rf_in v dd v dd v gs v gs
PTVA084007NF data sheet 6 of 9 rev. 03, 2017-08-30 reference circuit (cont.) reference circuit assembly dut PTVA084007NF v1 test fixture part no. ltn/PTVA084007NF v1 pcb rogers 4350, 0.508 mm [0.020] thick, 2 oz. copper, r = 3.66, ? = 758 C 803 mhz find gerber files for this test fixture on the infineon web site at http://www.infineon.com/rfpower components information component description manufacturer p/n input c101, c103 capacitor, 3.3 pf atc atc600f3r3cw250t c102 capacitor, 4.7 pf atc atc600f4r7cw250t c104, c105, c106 capacitor, 51 pf atc atc600f510jw250t c107, c108 capacitor, 10 f taiyo yuden umk325c7106mm-t r101, r102 resistor, 10 ohms panasonic electronic components erj-3geyj100v r103, r104 resistor, 1000 ohms panasonic electronic components erj-8geyj102v output c201, c202, c212, c213, c214, c215 capacitor, 10 f, 100 v tdk corporation c5750x7s2a106m230kb c203, c204, c205, c206 capacitor, 8.2 pf atc atc600f8r2cw250t c207, c208 capacitor, 3.0 pf atc atc600f3r0cw250t c209, c210, c211 capacitor, 51 pf atc atc600f510jw250t pinout diagram (top view) g d pin description d drain device g gate device s source (flange) v drain video decoupling (use only for decoupling), not for dc bias v v
data sheet 7 of 9 rev. 03, 2017-08-30 PTVA084007NF find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower package outline specifications package pg-hbsof-4-2 10 7 pg-hbsof-4-1_part1_03_07-13-2016 0.25 3.51 r 0 .5 22.7 0.15 6 0.5 16.75 9.75 9.75 3.3 r1 20 1 0.63 1.52 2 x 1.19 25.4 0.63 16.75 2 x 1.61 1 1.52 1.57 0.15 1.17 y 6 1 3 0.1 max. 16.76 10 g d v v 25.4 diagram notes?unless otherwise speci? ed: 1. mold/dam bar/metal protusion of 0.30 mm max per side not included. 2. metal protrusion are connected to source and shall not exceed 0.10 mm max. 3. fillets and radii: all radii are 0.3 mm max. 4. interpret dimensions and tolerances per iso 8015. 5. dimensions are mm. 6. does not include mold/dam bar/metal protusion. 7. exposed metal surface pre-plated, may not be covered by mold compound. 8. all tolerances 0.1 mm unless speci? ed otherwise. 9. all metal surfaces pre-plated, except area of cut. 10. lead thickness: 0.25 mm. 11. gold plating thickness: 0.25 micron max. 12. pins: d ? drain; g ? gate; s ? source; v ? v dd . pg-hbsof-4-2_part1_01_11-23-2016 diagram notes C unless otherwise specifed: 1. modem/dam bar/metal protrusion of 0.30 mm max per side not included. 2. metal protrusion are connected to source and shall not exceed 0.10 mm max. 3. fillets and radii: all radii are 0.3 mm max. 4. interpret dimensions and tolerances per iso 8015. 5. dimensions are mm. 6. dose not include mold/dam bar/metal protrusion. 7. exposed metal surface is tin-plated, may not be covered by mold compound. 8. all toleranceds 0.1 mm unless specifed otherwise. 9. all metal surfaces are tin-plated, except area of cut. 10. lead thickness: 0.25 mm. 11. pins: d = drain; g = gate; s C source; v = drain video decoupling (use only for decoupling), not for dc bias.
PTVA084007NF data sheet 8 of 9 rev. 03, 2017-08-30 find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower package outline specifications package pg-hbsof-4-2 view y 23.26 24.4 0.05 0.5 0.5 21.3 5.4 3.02 r 0. 4 2.7 0.75 7 g d v v s 2 2 diagram notes C unless otherwise specifed: 1. modem/dam bar/metal protrusion of 0.30 mm max per side not included. 2. metal protrusion are connected to source and shall not exceed 0.10 mm max. 3. fillets and radii: all radii are 0.3 mm max. 4. interpret dimensions and tolerances per iso 8015. 5. dimensions are mm. 6. dose not include mold/dam bar/metal protrusion. 7. exposed metal surface is tin-plated, may not be covered by mold compound. 8. all toleranceds 0.1 mm unless specifed otherwise. 9. all metal surfaces are tin-plated, except area of cut. 10. lead thickness: 0.25 mm. 11. pins: d = drain; g = gate; s = source; v = drain video decoupling (use only for decoupling), not for dc bias. pg-hbsof-4-2_part2_01_11-23-2016
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